Physicotechnological Principles of Deposition of Thin High-T$_{c}$ Superconducting Films of YBa$_{2}$Cu$_{3}$O$_{7-\delta}$

V. S. Flis$^{1}$, V. M. Pan$^{1}$, V. A. Komashko$^{1}$, V. O. Moskalyuk$^{1}$, I. I. Peshko$^{2}$

$^1$G.V. Kurdyumov Institute for Metal Physics, NAS of Ukraine, 36 Academician Vernadsky Blvd., UA-03142 Kyiv, Ukraine
$^2$Institute of Physics, NAS of Ukraine, 46 Nauky Ave., 03028 Kyiv, Ukraine

Received: 19.04.2006. Download: PDF

The careful experimental and theoretical studies followed by a subsequent improvement of high-$T_c$ superconducting YBa$_{2}$Cu$_{3}$O$_{7-\delta}$ films’ and buffer CeO$_{2}$ layers’ deposition technologies with a use of laser and magnetron deposition techniques are carried out in order to obtain СеО$_2$-buffered high-$T_c$ superconducting YBa$_{2}$Cu$_{3}$O$_{7-\delta}$ films with a controllable crystalline structure and high superconducting properties. As a result of this work, the physical and technological backgrounds of the deposition processes of perfect YBa$_{2}$Cu$_{3}$O$_{7-\delta}$ films on dielectric (sapphire) substrates with a use of buffer CeO$_{2}$ layers are developed for both two-beam laser and magnetron deposition techniques. The optimization of technological regimes is performed for both these deposition methods. As shown, at optimal conditions, it is possible to obtain epitaxial YBCO films with a controllable nanostructure by the use of both laser and magnetron deposition techniques. This gives in turn a possibility to change in a controllable way the main electrodynamical characteristics of superconducting YBCO films such as critical-current density and microwave surface impedance. In particular, our experiments revealed that the critical-current density, $J_c$, of YBCO films (77 K) strongly depends on the density of linear defects (edge dislocations) and can vary within the range of $10^5—7\cdot10^6$ A/cm$^2$ when the edge-dislocations’ density varies within the range of $10^{10}—10^{11}$ cm$^{−2}$. The microwave surface resistance, Rs(77 K, 135 GHz), for this range of dislocation densities varies within the interval of 115—160 m$\Omega$, respectively. The elaborated technologies of epitaxial YBCO films’ deposition can be used for production of HTSC-film microwave filters, which are of great interest for applications in the cellular and satellite telecommunication as well as for production of conducting elements with a large current-carrying capability for electrotechnical purposes.

Keywords: laser deposition, magnetron deposition, YBCO films, barrier layers, structure, critical current density, surface resistance.

PACS: 61.72.Lk, 74.72.Bk, 74.76.Bz, 81.15.Cd, 81.15.Fg, 81.40.Rs, 85.25.-j

DOI: https://doi.org/10.15407/ufm.07.04.189

Citation: V. S. Flis, V. M. Pan, V. A. Komashko, V. O. Moskalyuk, and I. I. Peshko, Physicotechnological Principles of Deposition of Thin High-T$_{c}$ Superconducting Films of YBa$_{2}$Cu$_{3}$O$_{7-\delta}$, Usp. Fiz. Met., 7, No. 4: 189—241 (2006) (in Ukrainian), doi: 10.15407/ufm.07.04.189


References (37)  
  1. S. I. Anisimov, Ya. A. Imas, G. S. Romanov, Yu. V. Khodyko, Deystvie izlucheniya bol'shoy moshchnosti na metally (Red. A. M. Bonch-Bruevich, M. A. El'yashevich) (Moskva: Nauka: 1970), s. 272.
  2. D. W. Gregg and S. J. Thomas, J. Appl. Phys., 37, No. 12: 4313 (1966). Crossref
  3. P. Langer, G. Tonon, F. Floux, and A. Ducauze, IEEE J., QE-2, No. 9: 499 (1966).
  4. R. K. Singh and J. Narayan, Phys. Rev. B, 41, No. 13: 8843 (1990). Crossref
  5. E. Bernal, J. F. Ready, and L. P. Levine, Phys. Letts., 19, No. 8: 645 (1966).
  6. R. F. Wood and G. E. Giles, Phys. Rev. B, 23, No. 6: 2923 (1981). Crossref
  7. A. E. Bell, RCA Review, 40: 295 (1979).
  8. T. Venkateson, X. D. Wu, A. Inam, and J. B. Wachtman, Appl. Phys. Lett., 52, No. 14: 1193 (1988). Crossref
  9. J. P. Zheng, Z. Q. Huang, D. T. Shaw, and H. S. Kwok, Appl. Phys. Lett., 54, No. 3: 280 (1989). Crossref
  10. Z. Trajanovic, L. Senapati, R. P. Sharma, and T. Venkatesan, Appl. Phys. Lett., 66, No. 18: 2418 (1995). Crossref
  11. B. Holzapfel, B. Roas, L. Schultz, P. Bauer et al., Appl. Phys. Lett., 61, No. 26: 3178 (1992). Crossref
  12. E. V. Peshen, A. V. Varlashkin, S. I. Krasnosvobodtsev, B. Brunner et al., Appl. Phys. Lett., 66, No. 17: 2292 (1995). Crossref
  13. M. D. Strikovsky, E. B. Klyuenkov, S. V. Gaponov, J. Schubert et al., Appl. Phys. Lett., 63, No. 8: 1146 (1993).
  14. Z. Trajanovic, S. Choopun, R.P. Sharma, and T. Venkatesan, Appl. Phys. Lett., 70, No. 25: 3461 (1997).
  15. F. Müller, K. Mann, P. Simon et al., Proc. SPIE, OEL'93: 1858 (1993).
  16. H. S. Kwok, Thin Solid Films, 218: 177 (1992).
  17. M. Lorenz, H. Hochmuth, D. Natusch et al., IEEE Trans. on Appl. Supercond., 7, No. 2: 1240 (1997).
  18. H. S. Kwok, P. Mattocks, L. Shi, X. W. Wang et al., Appl. Phys. Lett., 52, No. 21: 1825 (1988).
  19. L. Lynds, B. R. Weinberger, G. G. Peterson, and H. A. Krasinski, Appl. Phys. Lett., 52, No. 4: 320 (1988).
  20. Q. Y. Ying, D. T. Shaw, and H. S. Kwok, Appl. Phys. Lett., 53, No. 18: 1762 (1988). Crossref
  21. G. Piquero, P. M. Mejias, and R. Martinez-Herrero, Opt. Commun., 107: 179 (1994).
  22. BK Periodic library: CD CHIP, No. 12 (1998).
  23. N. I. Koroteev, I. L. Shumay, Fizika moshchnogo lazernogo izlucheniya (Moskva: Nauka: 1991), s. 310.
  24. E. G. Erichson, Laser Focus, No. 4: 16 (1970).
  25. A. A. Kaminskiy, G. R. Verdun, V. Koeshner, F. A. Kuznetsov i dr., Kv. elektronika, 19, No. 10: 941 (1992).
  26. M. W. Denhoff and J. P. McCaffrey, J. Appl. Phys., 70: 3986 (1991).
  27. X. D. Wu, R. C. Dye, R. E. Münchausen, S. R. Foltyn et al., Appl. Phys. Lett., 58: 2165 (1991). Crossref
  28. P. Merchant, R. D. Jacowitz, K. Tibbs, R. C. Taber, and S. S. Laderman, Appl. Phys. Lett., 60: 763 (1992).
  29. R. Wördenweber, J. Einfeld, R. Kutzner, A. G. Zaitsev et al., IEEE Trans. Appl. Supercond., 9: 2486 (1999).
  30. R. K. Hollmann, O. G. Vendik, A. G. Zaitsev, and B. T. Melekh, Supercond. Sci. Technol., 7: 609 (1994).
  31. A. G. Zaitsev, R. Wördenweber, G. Ockenfuß, R. Kutoier et al., IEEE Trans. Appl. Supercond., 7: 1482 (1997).
  32. K. D. Develos, M. Kusunoki, and S. Ohshima, Jap. J. Appl. Phys., 37: 6161 (1998).
  33. R.-J. Lin, L.-J. Chen, L.-J. Lin, Y.-C. Yu, W. Wang, and E. K. Lin, Jap. J. Appl. Phys., 35: 5805 (1996).
  34. J. H. Lee, W. I. Yang, H. J. Kwon, V. A. Komashko, and S. Y. Lee, Supercond. Sci. Technol., 13: 989 (2000).
  35. K. Conder, J. Karpinski, E. Kaldis et al., Physica C., 196: 164 (1992).
  36. V. M. Pan, V. S. Flis, O. P. Karasevska, V. I. Matsui et al., J. Supercond. Inc. Novel Magn., 14: 109 (2001).
  37. V. A. Komashko, A. G. Popov, V. L. Svetchnikov, A.V. Pronin et al., Supercond. Sci. Technol., 12: 1 (1999).