Nanoscale Materials for State-of-the-Art Magnetic Memory Technologies
A. E. Hafarov$^1$, S. M. Voloshko$^1$, A. Kaidatzis$^2$, and I. A. Vladymyrskyi$^1$
$^1$Metal Physics Department, National Technical University of Ukraine ‘Igor Sikorsky Kyiv Polytechnic Institute’, Prospect Peremohy 37, UA-03056 Kyiv, Ukraine
$^2$Institute of Nanoscience and Nanotechnology, N.C.S.R. Demokritos, Agia Paraskevi Attikis, 15310 Athens, Greece
Received 10.03.2021; final version — 09.06.2021 Download PDF
The review deals with different materials science aspects of the state-of-the-art magnetic memory technologies, such as magnetoresistive random-access memory (MRAM), antiferromagnetic (AFM) memory, and skyrmion racetrack memory. Particularly, the materials with high perpendicular magnetic anisotropy (PMA), such as CoFeB, L10-ordered Mn- and Fe-based alloys, are considered (Sec. 1) regarding their applications in MRAM technology. Furthermore, studies of AFM alloys, such as FeRh, CuMnAs, Mn2Au, are reviewed (Sec. 2) with an emphasis on application of these materials in AFM-memory technology. Finally, the last (3rd) section of the review is concerning materials that could be used in skyrmion racetrack memory.
Keywords: MRAM, spintronics, magnetic materials, antiferromagnets, skyrmion.
Citation: A. E. Hafarov, S. M. Voloshko, A. Kaidatzis, and I. A. Vladymyrskyi, Nanoscale Materials for State-of-the-Art Magnetic Memory Technologies, Progress in Physics of Metals, 22, No. 2: 175–203 (2021)