The Quantum Nature of the Formation Mechanisms of Ag Monolayer Structures on the Monocrystalline Semiconductor Surfaces
L. I. Karbivska, O. Ya. Kuznetsova, V. L. Karbivskyy, S. S. Smolyak, V. A. Artemyuk
G.V. Kurdyumov Institute for Metal Physics, NAS of Ukraine, 36 Academician Vernadsky Blvd., UA-03142 Kyiv, Ukraine
Received: 10.01.2019; final version — 15.01.2019. Download: PDF
The ‘quantum engineering’ of creation of the new forms of matter grown on the surface of semiconductor crystals is reviewed. The growth mechanisms for metal films on the semiconductor substrates are analyzed. The effects of a semiconductor substrate of III–V group on the morphology of the silver-films’ growth are considered. An influence of temperature on the morphology of films is described. The stability conditions for a low-temperature growth of Ag films on the Si(001)2×1 and Si(111)7×7 surfaces are revealed. As concluded, the quantum effects play a crucial role in the design of atomically flat metallic silver layers on the series of single crystal planes.
Keywords: single crystal semiconductor surfaces, silver films, morphology of films.
Citation: L. I. Karbivska, O. Ya. Kuznetsova, V. L. Karbivskyy, S. S. Smolyak, and V. A. Artemyuk, The Quantum Nature of the Formation Mechanisms of Ag Monolayer Structures on the Monocrystalline Semiconductor Surfaces, Usp. Fiz. Met., 20, No. 1: 52–74 (2019) (in Russian), doi: 10.15407/ufm.20.01.052