Kinetics of Formation and Growth of Microdefects in Crystals
S. J. Olikhovsky, M. M. Belova, Ye. V. Kochelab
G.V. Kurdyumov Institute for Metal Physics, NAS of Ukraine, 36 Academician Vernadsky Blvd., UA-03142 Kyiv, Ukraine
Received: 17.11.2005. Download: PDF
In the review, the main results of numerous direct observations of microdefects’ formation (oxygen precipitates and dislocation loops) in a silicon crystal during its growth and heat treatments are described. Thermodynamic conceptions concerning formation of new-phase particles in the supersaturated solid solution of oxygen in silicon are briefly presented. Classical approaches to the description of oxygen-precipitation kinetics are represented too. Modern models of kinetics of growth and decomposition of precipitates and dislocation loops in silicon are described.
Keywords: silicon, microdefects, point defects, supersaturated solid solution, oxygen precipitate.
PACS: 61.72. Bb, 61.72. Cc, 61.72.Jj, 61.72.Yx, 64.60.Qb, 82.60.Nh, 82.60.Qr
Citation: S. J. Olikhovsky, M. M. Belova, and Ye. V. Kochelab, Kinetics of Formation and Growth of Microdefects in Crystals, Usp. Fiz. Met., 7, No. 3: 135—171 (2006) (in Russian), doi: 10.15407/ufm.07.03.135